A metal-oxide-semiconductor field-effect transistor (MOSFET) is a voltage-controlled electronic component invented by a South Korean Engineer Dawon Kahng, and his colleague Martin M. Atalla in 1959 whilst working at Bell Labs. It was the first insulated gate FET, consisting of a metal gate (M), oxide insulation (O), and silicone semiconductor material (S). The three connections of a field effect transistor are source, drain, and gate. In this device, a voltage at the gate junction produces an electric field, which controls the current flowing between the source and drain junctions. This MOS technology was later utilised to develop integrated circuits (IC) which Kahng foresaw.
The application of a negative (-ve) gate voltage to the p-type 'enhancement-mode' MOSFET enhances the channels conductivity turning it “ON”. In contrast, n-channel depletion-mode devices have a conductive channel naturally existing within the transistor. MOSFET is defined as a particular type of field-effect transistor primarily used to switch or amplify electronic signals. The MOSFET was mainly designed to eliminate the disadvantages of the FETs, including moderate input impedance, high drain resistance, and slower operation. Practically speaking, MOSFETs are the advanced version of FETs. MOSFET mŏs ′fĕt′ Short for metal-oxide semiconductor field effect transistor. A type of field effect transistor, used predominantly in microprocessor and related technology, that consumes very little. MOSFET synonyms, MOSFET pronunciation, MOSFET translation, English dictionary definition of MOSFET. A type of semiconductor field effect transistor used in integrated circuit technology that consumes very little power and can be highly miniaturized.
Voltage Controlled Device
The differences in the operation between a MOSFET and a bipolar junction transistor (BJT) are huge, but the main ones are that a BJT is a current controlled device because current at the base junction controls the flow of current between the collector and emitter junctions. However, a MOSFET is a voltage-controlled device, where a voltage at the gate junction creates an electric field, which controls the flow of current between the source and drain junctions.
Unipolar
Another huge difference is that in a BJT, the electrons and holes are both responsible for carrying the current between the collector-emitter junctions, hence its name is 'bipolar'.
However, a MOSFET is a 'unipolar' device because only one charge carrier, either electrons, or holes carry the charge. In an n-channel MOSFET the majority carriers are electrons, however in p-channel MOSFET, the majority carriers are holes.
Symbol
IEEE defines the electrical symbol for use in circuit diagrams; however, there are many variations to the FET, JFET, and MOSFET symbols. As technology improves, manufacturers often make their own symbols to represent the component better. The American standard is of course far simpler and easier to remember.
A schematic showing the symmetrical complimentary output stage of an amplifier is easier to read with mirrored transistor symbols. Consequently, they mirror the p-channel symbol along the horizontal axis, and as a result, the source terminal ends up at the top.
If there were no labelling on the symbol, then it is very easy to identify the source terminal, because the gate junction is closer to it.
Arrow
For n-channel, the arrow points inward, however for p-channel the arrow points outward, and there is a very good reason for the meaning of this.
In p-channel MOSFET, conduction occurs through holes, which are the majority carriers for that device. Holes are positive and they attract to the negative side, hence the arrow indicates movement from drain to source.
In n-channel MOSFET, conduction occurs through electrons, which are the majority carriers for that device. They emerge from the source terminal and are attracted to drain which is positive; hence, the arrow indicates movement from source to drain.
Usually a circuit symbol contains a substrate terminal, however in practice it is not utilised. Instead, it connects internally to the source junction, thereby minimising the number of terminals to three.
Depletion Types
N-Channel Depletion
P-Channel Depletion
The depletion MOSFET, or d-MOSFET, is a device, which usually remains in a conducting mode unless a voltage at the gate junction is applied. The voltage at the gate has the effect of switching the device OFF because the electric field produced by the gate voltage reduces the majority charge carriers.
Enhancement Types
N-Channel Enhancement
P-Channel Enhancement
An enhancement MOSFET or e-MOSFET is a device, which remains in a non-conducting state unless a voltage at the gate is present. A voltage at the gate has the effect of switching ON the device, because the electric field produced by the gate voltage increases the charge carriers.
Input Impedance
A MOSFET is a common term for insulated gate field-effect transistor (IGFET). Since a layer of oxide insulates the gate junction, a MOSFET usually has very high input impedance in the order of a few mega ohms. This makes it a very useful component for the input stage of an audio amplifier, where impedance matching issues usually occur.
Temperature Sensitive
MOSFETS are also very hardy transistors because as their temperature increases, the resistance of the drain junction also increases thus choking the current flow. Therefore, they are ideal for use in the power output stage of an amplifier.
IC Application
The reason why integrated circuits (IC) utilise MOSFETS is that they occupy a very small footprint, and are much simpler to fabricate using lithographic technologies.
For IC construction n-channel, MOS is highly favoured because it is 2.5 times faster than p-channel MOS. This is because n-channel conduction occurs through electrons, as opposed to p-channel, which occurs through holes.
This Article Continues..
FET SymbolJFET Symbol
MOSFET Symbol
GCSE Electronics Circuit Symbols
- Basic Electronics Tutorial
- Electronic Components
- Resistors
- Capacitors
- Inductors
- Transformers
- Diodes
- Transistors
- Basic Electronics Useful Resources
- Selected Reading
FETs have a few disadvantages like high drain resistance, moderate input impedance and slower operation. To overcome these disadvantages, the MOSFET which is an advanced FET is invented.
MOSFET stands for Metal Oxide Silicon Field Effect Transistor or Metal Oxide Semiconductor Field Effect Transistor. This is also called as IGFET meaning Insulated Gate Field Effect Transistor. The FET is operated in both depletion and enhancement modes of operation. The following figure shows how a practical MOSFET looks like.
Construction of a MOSFET
The construction of a MOSFET is a bit similar to the FET. An oxide layer is deposited on the substrate to which the gate terminal is connected. This oxide layer acts as an insulator (sio2 insulates from the substrate), and hence the MOSFET has another name as IGFET. In the construction of MOSFET, a lightly doped substrate, is diffused with a heavily doped region. Depending upon the substrate used, they are called as P-type and N-type MOSFETs.
The following figure shows the construction of a MOSFET.
The voltage at gate controls the operation of the MOSFET. In this case, both positive and negative voltages can be applied on the gate as it is insulated from the channel. With negative gate bias voltage, it acts as depletion MOSFET while with positive gate bias voltage it acts as an Enhancement MOSFET.
Classification of MOSFETs
Depending upon the type of materials used in the construction, and the type of operation, the MOSFETs are classified as in the following figure.
After the classification, let us go through the symbols of MOSFET.
The N-channel MOSFETs are simply called as NMOS. The symbols for N-channel MOSFET are as given below.
The P-channel MOSFETs are simply called as PMOS. The symbols for P-channel MOSFET are as given below.
Now, let us go through the constructional details of an N-channel MOSFET. Usually an NChannel MOSFET is considered for explanation as this one is mostly used. Also, there is no need to mention that the study of one type explains the other too.
Construction of N- Channel MOSFET
Let us consider an N-channel MOSFET to understand its working. A lightly doped P-type substrate is taken into which two heavily doped N-type regions are diffused, which act as source and drain. Between these two N+ regions, there occurs diffusion to form an Nchannel, connecting drain and source.
A thin layer of Silicon dioxide (SiO2) is grown over the entire surface and holes are made to draw ohmic contacts for drain and source terminals. A conducting layer of aluminum is laid over the entire channel, upon this SiO2 layer from source to drain which constitutes the gate. The SiO2 substrate is connected to the common or ground terminals.
Because of its construction, the MOSFET has a very less chip area than BJT, which is 5% of the occupancy when compared to bipolar junction transistor. This device can be operated in modes. They are depletion and enhancement modes. Let us try to get into the details.
Working of N - Channel (depletion mode) MOSFET
What Is A Mosfet Amplifier
For now, we have an idea that there is no PN junction present between gate and channel in this, unlike a FET. We can also observe that, the diffused channel N (between two N+ regions), the insulating dielectric SiO2 and the aluminum metal layer of the gate together form a parallel plate capacitor.
If the NMOS has to be worked in depletion mode, the gate terminal should be at negative potential while drain is at positive potential, as shown in the following figure.
When no voltage is applied between gate and source, some current flows due to the voltage between drain and source. Let some negative voltage is applied at VGG. Then the minority carriers i.e. holes, get attracted and settle near SiO2 layer. But the majority carriers, i.e., electrons get repelled.
With some amount of negative potential at VGG a certain amount of drain current ID flows through source to drain. When this negative potential is further increased, the electrons get depleted and the current ID decreases. Hence the more negative the applied VGG, the lesser the value of drain current ID will be.
The channel nearer to drain gets more depleted than at source (like in FET) and the current flow decreases due to this effect. Hence it is called as depletion mode MOSFET.
Working of N-Channel MOSFET (Enhancement Mode)
The same MOSFET can be worked in enhancement mode, if we can change the polarities of the voltage VGG. So, let us consider the MOSFET with gate source voltage VGG being positive as shown in the following figure.
When no voltage is applied between gate and source, some current flows due to the voltage between drain and source. Let some positive voltage is applied at VGG. Then the minority carriers i.e. holes, get repelled and the majority carriers i.e. electrons gets attracted towards the SiO2 layer.
With some amount of positive potential at VGG a certain amount of drain current ID flows through source to drain. A dance of fire and ice for mac. When this positive potential is further increased, the current ID increases due to the flow of electrons from source and these are pushed further due to the voltage applied at VGG. Hence the more positive the applied VGG, the more the value of drain current ID will be. The current flow gets enhanced due to the increase in electron flow better than in depletion mode. Hence this mode is termed as Enhanced Mode MOSFET.
P - Channel MOSFET
The construction and working of a PMOS is same as NMOS. A lightly doped n-substrate is taken into which two heavily doped P+ regions are diffused. These two P+ regions act as source and drain. A thin layer of SiO2 is grown over the surface. Holes are cut through this layer to make contacts with P+ regions, as shown in the following figure.
Working of PMOS
When the gate terminal is given a negative potential at VGG than the drain source voltage VDD, then due to the P+ regions present, the hole current is increased through the diffused P channel and the PMOS works in Enhancement Mode.
When the gate terminal is given a positive potential at VGG than the drain source voltage VDD, then due to the repulsion, the depletion occurs due to which the flow of current reduces. Thus PMOS works in Depletion Mode. Though the construction differs, the working is similar in both the type of MOSFETs. Hence with the change in voltage polarity both of the types can be used in both the modes.
This can be better understood by having an idea on the drain characteristics curve.
Drain Characteristics
The drain characteristics of a MOSFET are drawn between the drain current ID and the drain source voltage VDS. The characteristic curve is as shown below for different values of inputs.
Actually when VDS is increased, the drain current ID should increase, but due to the applied VGS, the drain current is controlled at certain level. Hence the gate current controls the output drain current.
Transfer Characteristics
Transfer characteristics define the change in the value of VDS with the change in ID and VGS in both depletion and enhancement modes. The below transfer characteristic curve is drawn for drain current versus gate to source voltage.
Comparison between BJT, FET and MOSFET
Now that we have discussed all the above three, let us try to compare some of their properties.
| TERMS | BJT | FET | MOSFET |
|---|---|---|---|
| Device type | Current controlled | Voltage controlled | Voltage Controlled |
| Current flow | Bipolar | Unipolar | Unipolar |
| Terminals | Not interchangeable | Interchangeable | Interchangeable |
| Operational modes | No modes | Depletion mode only | Both Enhancement and Depletion modes |
| Input impedance | Low | High | Very high |
| Output resistance | Moderate | Moderate | Low |
| Operational speed | Low | Moderate | High |
| Noise | High | Low | Low |
| Thermal stability | Low | Better | High |
Mosfet Symbols
So far, we have discussed various electronic components and their types along with their construction and working. All of these components have various uses in the electronics field. To have a practical knowledge on how these components are used in practical circuits, please refer to the ELECTRONIC CIRCUITS tutorial.